GlobalFoundries has unveiled FDX Fusion, a fully depleted silicon-on-insulator (FD-SOI) platform aimed at edge and “Physical AI” systems. GF says it plans to begin manufacturing at its Dresden facility in 2028, following demonstrator silicon for customer evaluation targeted for early 2027 and an initial process design kit planned for mid-2027, according to the company’s October 9 roadmap announcement.
GF expects the first generation to deliver seven-nanometer-class digital performance and more than twice the density of first-generation FDX technology. Its planned feature set includes RF transistor performance up to 0.5 THz on the fT/fmax metrics, analog and mixed-signal features, low-leakage operation, in-memory computing, embedded nonvolatile memory and dense logic.
Evaluation silicon is the next proof point
Those figures are roadmap expectations, not production results. GF has targeted early-2027 demonstrator silicon for customer evaluation; the announcement does not report measurements from a production FDX Fusion chip.
FDX Fusion extends the company’s existing FDX FD-SOI roadmap. It is separate from the earlier GCRAM test vehicle developed with RAAAM on that existing platform, not a demonstration of FDX Fusion. Our report on the GCRAM test-chip tapeout covers that project.
